mmbt8550 (1.5a) pnp silicon epitaxial planar transistor for switching and amplifie r applications. especially suitable for af-driver stages and low power output stages. as complementary type the npn transistor mmbt8050 (1.5a) is recommended. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage -v cbo 40 v collector emitter voltage -v ceo 25 v emitter base voltage -v ebo 6 v collector current -i c 1.5 a power dissipation p tot 350 mw junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. max. unit dc current gain at -v ce = 1 v, -i c = 100 ma at -v ce = 1 v, -i c = 800 ma mmbt8550c mmbt8550d h fe h fe h fe 100 160 40 250 400 - - - - collector base cutoff current at -v cb = 35 v -i cbo - 100 na emitter base cutoff current at -v eb = 6 v -i ebo - 100 na collector base breakdown voltage at -i c = 100 a -v (br)cbo 40 - v collector emitter breakdown voltage at -i c = 2 ma -v (br)ceo 25 - v emitter base breakdown voltage at -i e = 100 a -v (br)ebo 6 - v collector emitter saturation voltage at -i c = 800 ma, -i b = 80 ma -v ce(sat) - 0.5 v base emitter saturation voltage at -i c = 800 ma, -i b = 80 ma -v be(sat) - 1.2 v base emitter voltage at -v ce = 1 v, -i c = 10 ma -v be(on) - 1 v gain bandwidth product at -v ce = 10 v, -i c = 50 ma f t 120 - mhz sot-23 plastic package
mmbt8550 (1.5a)
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